3N80 Amps, Volts N-channel Power Mosfet. DESCRIPTION. The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low gate . 3NTF3-T Amps, Volts N-channel Power Mosfet. DESCRIPTION. The UTC 3N80 uses advanced trench technology to provide excellent RDS(ON), low . 3N80 Datasheet PDF Download – N-Channel MOSFET Transistor, 3N80 data sheet.
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Power mosfet basics IR The metal oxide semiconductor field effect transistor MOSFET is based on the original field-effect transistor introduced in the 70s. The invention of the power MOSFET was partly driven by the limitations of bipolar power junction transistors BJTs krf, until recently, was the device of choice in power electronics applications. Although it is not possible to define absolutely the operating boundaries of a power device, we will loosely refer to the power device as any 3n08 that can switch at least 1A.
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The bipolar power transistor is a current controlled device. A large base drive current as high as one-fifth of the collector current is required to keep the device in the ON state.
Despite the very advanced state of manufacturability and lower costs of BJTs, these limitations have made the base drive circuit design more complicated and hence more expensive than the power MOSFET. Another BJT limitation is that both electrons and holes contribute to conduction. Presence of holes with their higher carrier lifetime causes the switching speed to be several orders of magnitude slower than for a power MOSFET of similar size and Bipolar Transistors voltage rating.
Also, BJTs suffer from thermal runaway. Their forward voltage drop decreases with increasing temperature causing diversion of current to a single device when several MOS devices are paralleled. They 0 are superior to the BJTs in high frequency applications where 1 10 switching power losses are important.
Plus, they can withstand Maximum Current A simultaneous application of high current and voltage without Figure 2. Current-Voltage undergoing destructive failure due to second breakdown. MOSFETs can also be paralleled easily because the forward voltage drop increases with increasing temperature, ensuring an even distribution of current among all components. This makes it more attractive to use the bipolar power transistor at the expense of worse high frequency performance.
Over time, new materials, structures and processing techniques are expected to raise these limits. The parasitic JFET appearing between the two body implants restricts current flow when the depletion widths of the two adjacent body diodes extend into the drift region with increasing drain voltage.
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The parasitic BJT can make the device susceptible to unwanted device turn-on and premature breakdown. The base resistance RB must be minimized through careful design of the doping and distance under the source region. CGS is the capacitance due to the overlap of the source and iff channel regions by the polysilicon gate and is independent of applied voltage.
CGD consists of two parts, the first is the capacitance associated with the overlap of the polysilicon gate and the silicon underneath in the JFET region. The second part is the capacitance associated with the depletion region immediately under the gate.
CGD is a nonlinear function of voltage. Finally, CDS, the capacitance associated with the body-drift diode, varies inversely with the square root of the drain-source bias.
The planar design has already been introduced in the schematic of Figure 3. The trench technology has the advantage of higher cell density but is more difficult to manufacture than the planar device.
BVDSS is normally measured at ? For drain voltages below BVDSS and with no bias on the D gate, no channel is a formed under the gate at the surface and the drain Source Source voltage is entirely Gate supported by the reverse-biased body-drift p-n junction.
Two related Oxide Gate phenomena can occur in Oxide poorly designed and processed devices: This provides a current path between Drain source and drain and b causes a soft breakdown Figure 5. The leakage current flowing between source irv drain is denoted by IDSS. There are tradeoffs to be made between RDS on that requires shorter channel lengths and punch-through avoidance that requires longer channel lengths.
The reach-through phenomenon occurs when the depletion region on the drift side of the body-drift p-n junction reaches the epilayer-substrate interface before avalanching takes place in the epi. These are normally negligible in high voltage devices but can become significant in low voltage devices. This 2 component is higher in high voltage 1 devices due to the higher resistivity or lower background carrier concentration in 0 0 5 10 15 the epi.
The substrate contribution becomes more significant for lower breakdown voltage devices. This parameter is normally quoted for a Vgs that gives a drain current equal to about 380 half of the maximum current rating value and 3j80 a VDS that irv operation in the constant current region. Transconductance is influenced by gate width, which increases in proportion to the active area as cell density increases. Cell density has increased over the years from around half a million per square inch in to around eight million for planar MOSFETs and around 12 million for the trench technology.
The limiting factor for even higher cell irt is the photolithography process control and resolution that allows contacts to be made to the source metallization in the center of the cells. Channel length also affects transconductance. Reduced channel length is beneficial to both gfs and on-resistance, with punch-through as a tradeoff. The lower limit 33n80 this length is set by the ability to control the double-diffusion process and is around mm today.
Finally the lower the gate oxide thickness the higher gfs. Vth is usually measured at a drain-source current of ? Common orf are Figure 3n0. Figure 10 shows a typical I-V characteristics for this diode at two temperatures.
Pchannel devices have a higher VF due to the higher contact resistance between metal irg p-silicon compared with n-type silicon. Maximum values of 1. It is give by Pd where: Figure 11 a shows the transfer characteristics and Figure 11 b is an equivalent circuit model often used for the analysis of MOSFET switching performance.
The switching performance of a device is determined by the time required to establish voltage changes across capacitances. RG is the distributed resistance of the gate and is approximately inversely proportional igf active area. LS and LD are source and drain lead inductances and are around a few tens of nH.
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Typical values of input Cissoutput Coss and reverse transfer Crss capacitances given in the data sheets are used by circuit designers as a starting point in determining circuit component values. The data sheet capacitances are defined in terms of the equivalent circuit capacitances as: CGD is also called the Miller capacitance because it causes the total dynamic input capacitance to become greater than the sum of the static capacitances.
Figure 12 shows a typical switching time test circuit. Similarly, turn-off delay, td offis the time taken to discharge the capacitance after the after is switched off.
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This continues until time t3. Good circuit design practice dictates the use of a higher gate voltage than the bare minimum required for switching and therefore the gate charge used in the calculations is QG corresponding to t4. For example, a device with a gate charge of 20nC can be turned on in 20? These simple calculations would not have been possible with input capacitance values. If this b rate is exceeded then the voltage across the gate-source terminals may become higher Figure When a voltage ramp appears across the drain and source terminal of the device a current I1 flows through the gate resistance, RG, by means of the gate-drain capacitance, CGD.
RG is the total gate resistance in the circuit and the voltage drop across it is given by: This capacitance gives rise to a current I 2 to flow through the base resistance RB when a voltage ramp appears across the drain-source terminals. If the applied drain voltage is greater than the openbase breakdown voltage, then the MOSFET will enter avalanche and may be destroyed if the current is not limited externally.
Grant and John Gower.